Light emitting charge injection transistor with p-type collector

We report the first realization of a charge injection transistor with a complementary collector. The device is implemented using InGaAs/InAlAs/InGaAs heterostructure material grown by molecular beam epitaxy. Real space transfer of hot electrons into the p-type collector leads to a luminescence signal arising from the recombination of the injected electrons with holes in the collector active region. The observed on/off ratio in the emitted light power is more than lo4 and obeys an exclusive OR function of input voltages. The estimated internal quantum efficiency is as high as 90%.